Triode/MOS tube/transistor/module

This device is suitable for analog or digital switching applications requiring very low on-resistance. From Process 58.

This device is suitable for analog or digital switching applications requiring very low on-resistance. From Process 58.

Ultra high voltage MOS tube

Automotive power MOSFETs. -30V, -1.95A, 200mΩ, Single P-Channel, SOT-23 AEC-Q101 Qualified MOSFET, Production Part Approval Process (PPAP) Qualified for Automotive Applications.

This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a monolithic bias network consisting of a single transistor and two resistors. Series base resistors and base-emitter resistors. The BRT eliminates the need for these separate components, which are integrated into a single device. Using BRT can reduce system cost and save board space.

Type: P-Channel Drain-Source Voltage (Vdss): -30V Continuous Drain Current (Id): -29A Power (Pd): 25W On-Resistance (RDS(on)@Vgs,Id): 11.0mΩ@10V,- 29A threshold voltage (Vgs(th)@Id): -1.5V@250uA P-channel, -30V, -32A, 11.0mΩ@-10V

PNP, Vceo=-160V, Ic=-1A, hfe=100~200