Triode/MOS tube/transistor/module

This high voltage NPN bipolar transistor is suitable for general switching applications. The device features TO-92 encapsulation and is suitable for medium power applications.

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 130A Power (Pd): 105W On-Resistance (RDS(on)@Vgs,Id): 3.0mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate charge (Qg@Vgs): 20nC@10V Input capacitance (Ciss@Vds): 2.6nF@15V Operating temperature: -55℃~+150℃@(Tj )

Crystal array device with rated 50V/500mA drive capability

Type N VDS(V) 20V VGS(V) ±12V Vth(V) 0.7V RDS(ON)(mΩ) 8mΩ ID(A) 12A

N-channel, 30V, 60A, 14mΩ@10V

Configuration Dual Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 5.5 VGS(th)(v) 0.7 RDS(ON)(m?)@4.262V 28 Qg(nC)@4.5V 8.8 QgS(nC) 0.8 Qgd(nC) 3.3 Ciss(pF) 550 Coss(pF) 100 Crss(pF) 85