Triode/MOS tube/transistor/module

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance. This device is suitable for power management and load switching applications commonly found in notebook computers and portable battery packs.

Configuration Dual Type P-Ch VDS(V) -20 VGS(V) 10 ID(A)Max. -7.5 VGS(th)(v) -0.6 RDS(ON)(m?)@4.180V 28 Qg(nC) @4.5V 13.8 QgS(nC) 4.1 Qgd(nC) 5.6 Ciss(pF) 1160 Coss(pF) 104 Crss(pF) 29

CSD18533Q5A 60V N-Channel NexFET Power MOSFET, CSD18533Q5A

Type P VDSS(V) 60 VGS(V) 20 VTH(V) 1 IDS64°C(A) 18 RDS(Max) 28 PD64°C(W) 2.8