Triode/MOS tube/transistor/module

N-channel, 80V, 75A, 6mΩ@10V

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PNP+N channel

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 3 VGS(th)(v) 0.85 RDS(ON)(m?)@4.21V 60 Qg(nC)@4.5V 5.4 QgS(nC) 0.44 Qgd(nC) 1 Ciss(pF) 320 Coss(pF) 35 Crss(pF) 22

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 125@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

Welding machine UPB power supply motor drive inverter VCE=1200V Ic=50A Ptot=314W 34mm replace Infineon infineon FF75R12RT4 Silan ST Magnachip 75N120 75A 1200V IGBT Modules

High Voltage, High Current Darlington Transistor Array

CSD17553Q5A N-Channel NexFET Power MOSFET, CSD17553Q5A