Triode/MOS tube/transistor/module

PNP

This N-channel MOSFET uses Fairchild's advanced Power Trench

N-channel, 600V, 7.5A, 1.2Ω@10V

VDMOS single tube

This P-channel enhancement mode field effect transistor is produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. This device is designed for battery powered applications such as notebook computers and cell phones. The device has excellent on-resistance performance even at gate drive voltages as low as 2.5V.

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PNP, Vceo=-30V, Ic=-0.8A

N-channel, 100V, 15.6A, 100mΩ@10V