Triode/MOS tube/transistor/module

PNP 1.5A

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PBHV2160Z,NPN,600V,0.1A,0.65W

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance. This device is suitable for power and load switching applications commonly found in notebook computers and portable battery packs.

N+P channel, 60V, 5.3A, 26mΩ@10V; -60V, -4.9A, 55mΩ@-10V