Diode/Bridge Rectifier

Diode configuration: Independent DC reverse withstand voltage (Vr): 1.2kV Average rectified current (Io): 20A Forward voltage drop (Vf): 1.45V@20A \n Silicon carbide (SiC) Schottky diode uses a new technology that can Provides excellent switching performance with higher reliability than silicon. No reverse recovery current, temperature independent switching characteristics and excellent thermal performance of Silicon carbide

Diode configuration: Independent DC reverse withstand voltage (Vr): 1.2kV Average rectified current (Io): 20A Forward voltage drop (Vf): 1.45V@20A \n Silicon carbide (SiC) Schottky diode uses a new technology that can Provides excellent switching performance with higher reliability than silicon. No reverse recovery current, temperature independent switching characteristics and excellent thermal performance of Silicon carbide

Maximum Dissipation\nPower 0.225 Maximum Reverse\nPeak Voltage (V) 70 Maximum Reverse\nPeak Voltage IR (uA) 100 Maximum Forward\nVoltage (V) 0.715 Maximum Forward\nVoltage IF (mA) 1 Maximum reverse \n current IR (uA) 2.5 Maximum reverse \n current VR (V) 70 Maximum reverse recovery time (ns) 6

20V,1A,VF=0.5V@1A