Diode/Bridge Rectifier

Strong anti-surge current capability, zero reverse recovery, Silicon carbideSchottky diode

Strong anti-surge current capability, zero reverse recovery, Silicon carbideSchottky diode

I(AV) 10 VRRM(V) 45 IFsM(A) 230 VFM(V) 0.48 VFMI(AV)(A) 10 IRM@VRRM(μA) 20

80V, 100mA, trr=4ns, VF=1.2V@100mA, PD=200mW

100V, 20A, VF=950mV@20A

100V, 20A, VF=950mV@20A

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

DC reverse withstand voltage (Vr): 1KV Average rectified current (Io): 3A Forward voltage drop (Vf): 1.7V Reverse current (Ir): 5uA@1kV Reverse recovery time (trr): 75ns