Diode/Bridge Rectifier

1200V40A Silicon carbideVF typical value 1.55V

I(AV) 3 VRRM(V) 200 IFsM(A) 80 VFM(V) 0.95 VFMI(AV)(A) 3 IRM@VRRM(μA) 0.3

Working current Io: 200MA Reverse withstand voltage VR: 100V

Ptot(mW) 150 VR(V) 80 IO(mA) 100 VF(V) 1.2 IF(mA) 100 IR(uA) 0.1 VR(V) 80 Trr(ns) 4

Schottky diode Silicon carbide DC reverse withstand voltage (Vr): 60V Average rectified current (Io): 2A Forward voltage drop (Vf): 700mV@2A 60V,2A,VF=0.52V@2A

DC Reverse Withstand Voltage (Vr) 1000 Average Rectified Current (Io) 20 Forward Surge Current (Ifsm) 260 Reverse Current (Ir) 10

HDL6S-F1-0000

Schottky diode Silicon carbide diode configuration: stand-alone DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 350mA Forward voltage drop (Vf): 600mV@200mA Reverse current (Ir): 5uA@30V

Schottky diode Silicon carbide diode configuration: stand-alone DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 350mA Forward voltage drop (Vf): 600mV@200mA Reverse current (Ir): 5uA@30V