Diode/Bridge Rectifier

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

The NTS12100EMFS is our new 12A 100V very low drain trench Schottky diode. This new technology enables lower forward voltage drop without the high reverse leakage seen with planar Schottky diodes. This platform also provides very stable switching characteristics over a wide temperature range, making it an ideal output for switching power supplies.