Diode/Bridge Rectifier

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries feature epitaxial structures with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency switching power supplies, low-voltage converters, O-Ring diodes, and polarity protection devices.

DC reverse withstand voltage (Vr) Silicon carbide100 Average rectified current (Io) 5 Reverse current (Ir) 0.5

DC reverse withstand voltage (Vr) Silicon carbide100 Average rectified current (Io) 5 Reverse current (Ir) 0.5

60V 3A VF=0.5V @ 3A

600V 15A

This switching diode is suitable for high speed switching applications.