Diode/Bridge Rectifier

BAS70T-F2-0000HF

100V, 20A, VF=0.85V@2A

VR reverse voltage/600V; IR reverse leakage/5.0uA; VF forward voltage/1.7V; IO average current/3.0A; TRR recovery time/35nS

The Schottky rectifier uses the Schottky barrier principle and uses a large area metal-silicon power diode. The advanced geometry of this Schottky rectifier features chromium barrier metal, epitaxial structure with oxide passivation, and metal-covered contacts. The rectifier is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.