MT29F2G08ABAEAWP:E TR

Product Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High capacity (2 gigabits)
  • Low power consumption
  • Fast read and write speeds
• Package: Surface Mount Technology (SMT)
• Essence: Flash memory chip
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Memory Type: NAND Flash
• Density: 2 Gb (Gigabits)
• Organization: 256 M x 8 bits
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: 10 years
• Endurance: 100,000 program/erase cycles

Pin Configuration

The MT29F2G08ABAEAWP:E TR has the following pin configuration:

1. ALE (Address Latch Enable)
2. CLE (Command Latch Enable)
3. CE (Chip Enable)
4. RE (Read Enable)
5. WE (Write Enable)
6. R/B (Ready/Busy)
7. VCC (Power Supply)
8. VSS (Ground)
9. DQ0-DQ7 (Data Input/Output)
10. WP (Write Protect)
11. NC (No Connection)

Functional Features

• Page Read and Program Operations
• Block Erase Operation
• Random Access
• Automatic Program and Erase Algorithms
• Internal ECC (Error Correction Code) for Data Integrity
• Power Saving Modes

Advantages

• High storage capacity
• Fast data transfer rates
• Low power consumption
• Reliable data retention
• Compact package size
• Easy integration into existing systems

Disadvantages

• Limited endurance compared to other memory technologies
• Higher cost per bit compared to some alternatives
• Requires additional circuitry for error correction

Working Principles

The MT29F2G08ABAEAWP:E TR is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. Data can be written to and read from the memory using specific commands and addresses.

During programming, an electrical charge is applied to the memory cells, altering their state to represent the desired data. Erasing involves removing the stored charge from the cells. The memory controller manages these operations and ensures data integrity through error correction techniques.

Application Field Plans

The MT29F2G08ABAEAWP:E TR is widely used in various electronic devices that require non-volatile data storage, such as:

1. Solid-state drives (SSDs)
2. USB flash drives
3. Digital cameras
4. Mobile phones
5. Tablets
6. Industrial control systems
7. Automotive electronics

Alternative Models

1. MT29F2G08ABBEAWP:E TR - Same specifications, different package type (BGA)
2. MT29F2G08ABCEAWP:E TR - Same specifications, different organization (512 M x 4 bits)
3. MT29F2G08ABDEAWP:E TR - Same specifications, different operating temperature range (-25°C to +85°C)

These alternative models offer similar functionality but may have variations in package type, organization, or operating conditions.

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