M29W200BB70N1

Product Overview

Category

M29W200BB70N1 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29W200BB70N1 retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: The device provides quick access to stored data, ensuring efficient operation.
• Reliable: It has a high endurance and can withstand numerous read and write cycles.
• Low power consumption: The M29W200BB70N1 is designed to consume minimal power during operation.

Package

The M29W200BB70N1 is available in a compact surface-mount package, which facilitates easy integration into electronic circuits.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The M29W200BB70N1 is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Capacity: 2 Megabits (256 Kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 90 ns (Max)
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The M29W200BB70N1 features a parallel interface with the following pin configuration:

1. VCC: Power supply voltage
2. A0-A16: Address inputs
3. DQ0-DQ7: Data inputs/outputs
4. WE#: Write enable input
5. CE#: Chip enable input
6. OE#: Output enable input
7. RP#/BYTE#: Reset/byte enable input
8. VSS: Ground

Functional Features

• Erase and Program Operations: The M29W200BB70N1 supports both erase and program operations, allowing for flexible data manipulation.
• Block Erase: It enables erasing of specific blocks of memory, facilitating efficient memory management.
• Write Protection: This product offers write protection features to prevent accidental modification or deletion of stored data.
• Automatic Page Write: The device supports automatic page write operations, enhancing data transfer efficiency.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable data retention
• Low power consumption
• Flexible erase and program operations

Disadvantages

• Limited compatibility with certain older systems due to the parallel interface

Working Principles

The M29W200BB70N1 utilizes flash memory technology to store data. It employs a combination of floating-gate transistors and electrically isolated gates to retain information even when power is removed. The device uses electrical signals to perform erase and program operations, modifying the charge levels in the floating gates to represent digital data.

Detailed Application Field Plans

The M29W200BB70N1 finds applications in various fields, including: - Consumer electronics - Automotive systems - Industrial automation - Medical devices - Communication equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the M29W200BB70N1 include: - M29W200FT - M29W200FB - M29W200DB

These models provide comparable storage capacity, performance, and features, making them suitable alternatives for different application requirements.

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