JS28F00AM29EBHB TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory technology for long-term data storage
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 2 gigabits (256 megabytes)
• Interface: Parallel
• Supply Voltage: 3.3V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration (Detailed)

The JS28F00AM29EBHB TR flash memory IC has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data inputs/outputs
4. WE#: Write enable input
5. CE#: Chip enable input
6. OE#: Output enable input
7. RP#/BYTE#: Reset/byte enable input
8. RY/BY#: Ready/busy output
9. WP#: Write protect input
10. VSS: Ground

Functional Features

• High-speed read and write operations
• Sector erase and block erase capabilities
• Built-in error correction code (ECC) for data integrity
• Low power consumption
• Hardware and software protection mechanisms

Advantages

• Large storage capacity
• Fast access times
• Reliable and durable
• Suitable for a wide range of electronic devices
• Low power consumption

Disadvantages

• Relatively high cost compared to other memory technologies
• Limited endurance compared to some newer memory technologies

Working Principles

The JS28F00AM29EBHB TR flash memory operates based on the principles of floating-gate transistors. It uses a combination of electric fields and charge trapping to store data in non-volatile memory cells. When data is written, electrons are trapped in the floating gate, altering the transistor's behavior. This alteration allows the stored data to be retained even when power is removed.

Detailed Application Field Plans

The JS28F00AM29EBHB TR flash memory is widely used in various electronic devices, including:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Automotive electronics
6. Industrial control systems

Its high capacity, fast access times, and reliability make it suitable for applications that require large amounts of non-volatile storage.

Alternative Models (Detailed and Complete)

1. JS28F00AM29EBHB: Similar specifications and features, but without the "TR" suffix indicating tape and reel packaging.
2. JS28F00AM29EBHB-90: Same specifications as JS28F00AM29EBHB TR, but with a faster access time of 90 ns.
3. JS28F00AM29EBHB-120: Same specifications as JS28F00AM29EBHB TR, but with a slower access time of 120 ns.

These alternative models provide options for different performance requirements or packaging preferences.

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