IRFB4137PBF

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies and motor control
Characteristics: High voltage, high speed, low on-resistance
Package: TO-220AB
Essence: Power MOSFET for efficient switching
Packaging/Quantity: Tube/50 units

Specifications

• Voltage - Rated: 40V
• Rds On (Max): 8.5 mOhm
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) @ Vds: 3700pF @ 25V
• Power Dissipation (Max): 200W

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Fast switching speed
• Low gate charge
• Low on-resistance
• High input capacitance

Advantages and Disadvantages

Advantages: - Efficient switching - Low power dissipation - Suitable for high-frequency applications

Disadvantages: - Higher input capacitance may require additional driver circuitry

Working Principles

The IRFB4137PBF operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

1. Power Supplies: Used in switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Enables precise control of motor speed and direction in various industrial and automotive applications.

Detailed and Complete Alternative Models

1. IRFB4110PbF: Similar specifications with a lower on-resistance.
2. IRFB4227PbF: Higher voltage rating and lower input capacitance.

Note: The alternative models listed above are for reference purposes and may require thorough evaluation based on specific application requirements.

This comprehensive entry provides an in-depth understanding of the IRFB4137PBF, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.