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IPB65R099C6ATMA1
বিস্তারিত দেখুন ডেটাশিট

IPB65R099C6ATMA1

Product Overview

Category

The IPB65R099C6ATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification purposes.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB65R099C6ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management in various electronic applications.

Packaging/Quantity

It is usually packaged in reels with a quantity per reel varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 650V
  • Continuous Drain Current (ID): 6.5A
  • On-Resistance (RDS(on)): 0.99Ω
  • Power Dissipation (PD): 48W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IPB65R099C6ATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching applications.

Advantages

  • Suitable for high voltage applications
  • Low power dissipation
  • Fast switching speed

Disadvantages

  • Limited continuous drain current compared to higher-rated MOSFETs
  • Higher on-resistance compared to some specialized MOSFETs

Working Principles

The IPB65R099C6ATMA1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

This MOSFET is widely used in: - Switching power supplies - Motor control - LED lighting - Solar inverters - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the IPB65R099C6ATMA1 include: - IPB60R099CP - IPB65R190CFD - IPB65R190C6

In conclusion, the IPB65R099C6ATMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for various electronic applications requiring efficient power management.

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প্রযুক্তিগত সমাধানে IPB65R099C6ATMA1 এর প্রয়োগ সম্পর্কিত 10টি সাধারণ প্রশ্ন ও উত্তর তালিকাভুক্ত করুন

  1. What is the maximum drain-source voltage of IPB65R099C6ATMA1?

    • The maximum drain-source voltage of IPB65R099C6ATMA1 is 650V.

  2. What is the continuous drain current of IPB65R099C6ATMA1?

    • The continuous drain current of IPB65R099C6ATMA1 is 65A.

  3. What is the on-resistance of IPB65R099C6ATMA1?

    • The on-resistance of IPB65R099C6ATMA1 is typically 99mΩ at Vgs = 10V.

  4. What is the gate threshold voltage of IPB65R099C6ATMA1?

    • The gate threshold voltage of IPB65R099C6ATMA1 is typically 2.5V.

  5. What are the typical applications for IPB65R099C6ATMA1?

    • IPB65R099C6ATMA1 is commonly used in motor control, power supplies, and DC-DC converters.

  6. What is the operating temperature range of IPB65R099C6ATMA1?

    • The operating temperature range of IPB65R099C6ATMA1 is -55°C to 150°C.

  7. Does IPB65R099C6ATMA1 have built-in protection features?

    • Yes, IPB65R099C6ATMA1 has built-in overcurrent protection and thermal shutdown features.

  8. What is the package type of IPB65R099C6ATMA1?

    • IPB65R099C6ATMA1 is available in a TO-263-7 package.

  9. Is IPB65R099C6ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB65R099C6ATMA1 is suitable for high-frequency switching due to its low on-resistance.

  10. Are there any recommended external components to use with IPB65R099C6ATMA1?

    • It is recommended to use appropriate gate drivers and snubber circuits when integrating IPB65R099C6ATMA1 into a design for optimal performance and reliability.