2N7002H6327XTSA2

Product Overview

Category

The 2N7002H6327XTSA2 belongs to the category of small-signal field-effect transistors (FETs).

Use

It is commonly used for switching and amplification applications in electronic circuits.

Characteristics

• Low threshold voltage
• Low ON-resistance
• High-speed switching
• Small package size

Package

The 2N7002H6327XTSA2 is typically available in a SOT-23 surface-mount package.

Essence

This FET is essential for controlling the flow of current in various electronic devices and circuits.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, such as 3000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 60V
• Continuous Drain Current (ID): 115mA
• Total Power Dissipation (PD): 200mW
• Gate-Source Voltage (VGS): ±20V
• ON-Resistance (RDS(ON)): 5Ω (max)

Detailed Pin Configuration

The 2N7002H6327XTSA2 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low threshold voltage allows for efficient control of the FET.
• High-speed switching enables rapid response in electronic circuits.
• Low ON-resistance minimizes power loss and heat generation.

Advantages and Disadvantages

Advantages

• Small package size makes it suitable for compact designs.
• Low ON-resistance results in minimal power dissipation.
• High-speed switching enhances overall circuit performance.

Disadvantages

• Limited maximum drain-source voltage compared to some other FETs.
• Sensitivity to static electricity requires careful handling during assembly.

Working Principles

The 2N7002H6327XTSA2 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

Switching Circuits

The FET can be used in various electronic switches, such as relay drivers and motor control circuits.

Amplification

In audio amplifiers and signal processing circuits, the FET can be utilized for its high input impedance and low noise characteristics.

Voltage Regulation

By incorporating the FET into voltage regulator circuits, stable and efficient power supplies can be achieved.

Detailed and Complete Alternative Models

• 2N7002LT1G: Similar specifications and package type.
• BS170: Higher drain-source voltage rating but larger package size.

In conclusion, the 2N7002H6327XTSA2 is a versatile small-signal FET with excellent switching characteristics and is widely used in various electronic applications due to its compact size and efficient performance.

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