IDT71V67602S150BQI

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V67602S150BQI is a high-speed synchronous static random-access memory (SRAM) designed for use in various electronic devices and systems.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Synchronous interface - Reliable performance

Package: The IDT71V67602S150BQI is available in a compact and durable package, ensuring easy integration into electronic circuits.

Essence: This IC serves as a reliable and efficient memory component, providing fast and stable data storage capabilities.

Packaging/Quantity: The IDT71V67602S150BQI is typically packaged in trays or reels, with quantities varying based on customer requirements.

Specifications

• Memory Type: Synchronous SRAM
• Organization: 8 Meg x 16
• Supply Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 48-pin TQFP

Detailed Pin Configuration

The IDT71V67602S150BQI features a 48-pin TQFP package with the following pin configuration:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDDQ
20. DQM0
21. DQM1
22. WE#
23. CAS#
24. RAS#
25. OE#
26. A0
27. A1
28. A2
29. A3
30. A4
31. A5
32. A6
33. A7
34. A8
35. A9
36. A10
37. A11
38. A12
39. A13
40. A14
41. A15
42. A16
43. A17
44. A18
45. VDD
46. VSS
47. CLK
48. NC

Functional Features

• High-speed operation: The IDT71V67602S150BQI offers fast access times, allowing for efficient data retrieval and storage.
• Synchronous interface: The synchronous design ensures synchronized communication between the memory and the system, enhancing overall performance.
• Low power consumption: This IC is designed to minimize power usage, making it suitable for battery-powered devices.
• Reliable performance: The IDT71V67602S150BQI delivers consistent and dependable memory functionality, ensuring data integrity.

Advantages and Disadvantages

Advantages: - High-speed operation enables quick data access. - Synchronous interface improves system performance. - Low power consumption prolongs battery life. - Reliable performance ensures data integrity.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per unit compared to alternative memory options.

Working Principles

The IDT71V67602S150BQI operates based on the principles of synchronous SRAM. It utilizes a synchronous interface to communicate with the system, enabling precise timing and efficient data transfer. The memory cells within the IC store data in a static state, allowing for fast access times and reliable data retention.

Detailed Application Field Plans

The IDT71V67602S150BQI finds applications in various electronic devices and systems, including but not limited to: - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

1. IDT71V67602S133BQI: Similar to the IDT71V67602S150BQI, but with a slightly lower access time of 13 ns.
2. IDT71V67602S166BQI: Similar to the IDT71V67602S150BQI, but with a slightly higher access time of 16 ns.
3. IDT71V67602S100BQI: Similar to the IDT71V67602S150BQI, but with a lower access time of 10 ns.

These alternative models offer similar functionality and characteristics, providing options based on specific system requirements.

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