IDT71V3556S150BG
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory device
- Characteristics:
- High-speed synchronous static random-access memory (SRAM)
- Low power consumption
- Large storage capacity
- Package: Ball Grid Array (BGA)
- Essence: Provides high-speed and low-power memory storage for various electronic devices.
- Packaging/Quantity: Available in reels, with a quantity of 250 units per reel.
Specifications
- Memory Type: Synchronous SRAM
- Density: 4 Megabits (4Mbit)
- Organization: 256K words x 16 bits
- Operating Voltage: 3.3V
- Access Time: 15 ns
- Clock Frequency: 66 MHz
- Interface: Parallel
- Operating Temperature Range: -40°C to +85°C
Pin Configuration
The IDT71V3556S150BG has a total of 119 pins. The pin configuration is as follows:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- VSSQ
- NC
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- A32
- A33
- A34
- A35
- A36
- A37
- A38
- A39
- A40
- A41
- A42
- A43
- A44
- A45
- A46
- A47
- A48
- A49
- A50
- A51
- A52
- A53
- A54
- A55
- A56
- A57
- A58
- A59
- A60
- A61
- A62
- A63
- A64
- A65
- A66
- A67
- A68
- A69
- A70
- A71
- A72
- A73
- A74
- A75
- A76
- A77
- A78
- A79
- A80
- A81
- A82
- A83
- A84
- A85
- A86
- A87
- A88
- A89
- A90
- A91
- A92
- A93
- A94
- A95
- A96
- A97
- A98
- A99
- A100
- A101
- A102
- A103
- A104
- A105
- A106
- VDDQ
Functional Features
- High-speed operation with a clock frequency of up to 66 MHz.
- Synchronous interface for efficient data transfer.
- Low power consumption, making it suitable for battery-powered devices.
- Large storage capacity of 4 Megabits.
- Reliable and durable memory storage.
Advantages
- High-speed access and data transfer.
- Low power consumption extends battery life.
- Large storage capacity for storing complex data.
- Reliable and durable memory device.
Disadvantages
- Limited compatibility with certain older systems that do not support synchronous SRAM.
- Higher cost compared to other types of memory devices.
Working Principles
The IDT71V3556S150BG operates as a synchronous static random-access memory (SRAM). It stores data in a volatile manner, meaning the data is lost
প্রযুক্তিগত সমাধানে IDT71V3556S150BG এর প্রয়োগ সম্পর্কিত 10টি সাধারণ প্রশ্ন ও উত্তর তালিকাভুক্ত করুন
Sure! Here are 10 common questions and answers related to the application of IDT71V3556S150BG in technical solutions:
Q: What is IDT71V3556S150BG? A: IDT71V3556S150BG is a high-speed, low-power CMOS synchronous static RAM (SRAM) with a capacity of 256K x 36 bits.
Q: What are the key features of IDT71V3556S150BG? A: Some key features include a synchronous interface, fast access time of 10ns, low power consumption, and a wide operating voltage range.
Q: What are the typical applications of IDT71V3556S150BG? A: This SRAM is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance computing applications.
Q: How does IDT71V3556S150BG achieve low power consumption? A: The SRAM utilizes advanced CMOS technology and has various power-saving modes, such as standby and power-down modes, to minimize power consumption when not in use.
Q: Can IDT71V3556S150BG operate at different voltages? A: Yes, it can operate at a wide voltage range of 3.0V to 3.6V, making it compatible with various system designs.
Q: Does IDT71V3556S150BG support burst mode operation? A: Yes, it supports burst mode operation, allowing for efficient data transfer between the SRAM and other components.
Q: What is the maximum operating frequency of IDT71V3556S150BG? A: The SRAM can operate at a maximum frequency of 150MHz, enabling high-speed data access and transfer.
Q: Can IDT71V3556S150BG be used in both read and write operations simultaneously? A: Yes, it supports simultaneous read and write operations, making it suitable for applications that require concurrent data access.
Q: Does IDT71V3556S150BG have any built-in error correction capabilities? A: No, this SRAM does not have built-in error correction capabilities. However, external error correction techniques can be implemented if required.
Q: What is the package type of IDT71V3556S150BG? A: It is available in a 100-pin TQFP (Thin Quad Flat Package) package, which provides ease of integration into various system designs.
Please note that these answers are general and may vary depending on specific application requirements and datasheet specifications.