S34ML02G200TFB000

Product Overview

Category

S34ML02G200TFB000 belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: S34ML02G200TFB000 has a storage capacity of 2 gigabits (256 megabytes).
• Fast data transfer rate: It offers high-speed read and write operations, allowing for quick data access.
• Reliable performance: The product ensures data integrity and reliability through advanced error correction techniques.
• Low power consumption: S34ML02G200TFB000 is designed to minimize power consumption, making it suitable for battery-powered devices.
• Long lifespan: With its robust design and wear-leveling algorithms, this NAND flash memory provides a long lifespan.

Package and Quantity

S34ML02G200TFB000 is available in a small form factor package, commonly known as a TSOP (Thin Small Outline Package). It is typically sold in quantities of one unit per package.

Specifications

• Storage Capacity: 2 gigabits (256 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 50 megabytes per second (read), up to 25 megabytes per second (write)

Detailed Pin Configuration

The pin configuration of S34ML02G200TFB000 is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. /CE: Chip Enable (active low)
4. /WE: Write Enable (active low)
5. /RE: Read Enable (active low)
6. /WP: Write Protect (active low)
7. /RP: Reset/Power-down (active low)
8. SIO0: Serial Data Input/Output 0
9. SIO1: Serial Data Input/Output 1
10. SIO2: Serial Data Input/Output 2
11. SIO3: Serial Data Input/Output 3
12. CLE: Command Latch Enable
13. ALE: Address Latch Enable
14. WP#/ACC: Write Protect/Access
15. R/B#: Ready/Busy

Functional Features

• Block Erase and Program: S34ML02G200TFB000 allows for erasing and programming data in blocks, enabling efficient management of stored information.
• Wear-Leveling: The product incorporates wear-leveling algorithms to evenly distribute write operations across memory cells, extending the lifespan of the NAND flash memory.
• Error Correction: Advanced error correction techniques are implemented to ensure data integrity and reliability.
• Bad Block Management: S34ML02G200TFB000 includes a mechanism to manage and mark bad blocks, preventing their use for data storage.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Long lifespan
• Reliable performance

Disadvantages

• Relatively higher cost compared to other types of memory
• Limited endurance due to the finite number of erase/write cycles

Working Principles

S34ML02G200TFB000 utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read or write data, specific voltage levels are applied to the appropriate pins, allowing for the manipulation of the charge on the floating gates.

Detailed Application Field Plans

S34ML02G200TFB000 finds applications in various electronic devices, including: - Smartphones and tablets for data storage and app execution - Digital cameras for storing photos and videos - Solid-state drives (SSDs) for high-speed data storage in computers and servers

Detailed and Complete Alternative Models

Some alternative models to S34ML02G200TFB000 include: - S34ML04G200TFB000: A similar NAND flash memory with double the storage capacity (4 gigabits) - S34ML08G200TFB000: A higher-capacity option with 8 gigabits of storage - S34ML16G200TFB000: An alternative model offering 16 gigabits of storage capacity

Note: The above alternative models are provided as examples and may not represent an exhaustive list of available options.

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