S29GL256P11TAIV20

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-density storage capacity
  • Fast read and write speeds
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Provides reliable and efficient data storage solution for various electronic devices
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Organization: 32 Megabit x 8-bit
• Voltage Supply: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns (max)
• Erase/Program Suspend/Erase Suspend: Yes
• Burst Mode: Yes
• Sector Architecture: Uniform 64 KByte sectors with 4 KByte sub-sectors
• Programming Time: 10 µs (typical)
• Erase Time: 1.5 seconds (typical)

Detailed Pin Configuration

The S29GL256P11TAIV20 has a total of 48 pins, which are assigned specific functions for proper operation. The pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect/acceleration control
10. VSS: Ground

Functional Features

• High-speed read and write operations
• Efficient erase capability at the sector level
• Reliable data retention
• Low power consumption during standby mode
• Built-in hardware and software protection mechanisms
• Support for burst mode operations

Advantages

• Large storage capacity for data-intensive applications
• Fast access times for quick data retrieval
• Low power consumption prolongs battery life in portable devices
• Robust and durable design ensures data integrity
• Versatile interface allows compatibility with various systems

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance due to finite erase/write cycles
• Susceptible to data loss in case of power failure during write operations

Working Principles

The S29GL256P11TAIV20 utilizes a floating gate transistor technology to store data. It employs a combination of electrical charges to represent binary information. During programming, electrons are trapped in the floating gate, altering the transistor's conductive properties. This change is detected during read operations, allowing the retrieval of stored data.

Detailed Application Field Plans

The S29GL256P11TAIV20 is widely used in various electronic devices that require non-volatile data storage. Some common application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment, navigation, engine control units) - Industrial equipment (e.g., automation systems, control panels, data loggers) - Medical devices (e.g., patient monitoring systems, diagnostic equipment) - Networking devices (e.g., routers, switches, modems)

Detailed and Complete Alternative Models

• S29GL128P10TFI010: 128 Megabit Flash Memory with similar specifications
• S29GL512P11FFI020: 512 Megabit Flash Memory with higher storage capacity
• S29GL064N90TFI040: 64 Megabit Flash Memory with lower storage capacity

(Note: The above alternative models are provided for reference and may have different specifications or pin configurations. It is recommended to consult the manufacturer's datasheets for accurate information.)

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