S29GL256N90TFAR10

Product Overview

Category: Flash Memory
Use: Data storage and retrieval
Characteristics: High capacity, non-volatile, fast read/write speeds
Package: Surface Mount Technology (SMT)
Essence: Non-volatile memory for storing digital data
Packaging/Quantity: Tape and Reel, 250 units per reel

Specifications

• Manufacturer: Cypress Semiconductor
• Part Number: S29GL256N90TFAR10
• Memory Type: NOR Flash
• Density: 256 Megabits (32 Megabytes)
• Organization: 16 M x 16 bits
• Voltage Supply: 2.7V - 3.6V
• Access Time: 90 ns
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• Package Type: 48-pin TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The S29GL256N90TFAR10 has a total of 48 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. DQ0
18. DQ1
19. DQ2
20. DQ3
21. DQ4
22. DQ5
23. DQ6
24. DQ7
25. DQ8
26. DQ9
27. DQ10
28. DQ11
29. DQ12
30. DQ13
31. DQ14
32. DQ15
33. VPP
34. WE#
35. CE#
36. OE#
37. BYTE#
38. RY/BY#
39. RESET#
40. ALE
41. WP#
42. VCC
43. VSS
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient data management
• Built-in hardware and software protection mechanisms
• Low power consumption
• Reliable and durable design for extended product lifespan

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Non-volatile memory retains data even without power - Suitable for a wide range of applications

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited endurance (number of erase/write cycles)

Working Principles

The S29GL256N90TFAR10 is based on NOR flash memory technology. It utilizes a grid of memory cells, where each cell stores a binary value (0 or 1) by trapping electric charge. The memory cells are organized into sectors, allowing for efficient erasure and rewriting of data. When data is read from or written to the memory, the appropriate voltage levels are applied to the pins, enabling the transfer of data between the memory and the external device.

Detailed Application Field Plans

The S29GL256N90TFAR10 is widely used in various electronic devices and systems that require non-volatile storage capabilities. Some common application fields include:

1. Embedded Systems: Used as boot memory or for storing firmware and configuration data.
2. Consumer Electronics: Found in digital cameras, set-top boxes, and portable media players for data storage.
3. Automotive: Used in infotainment systems, navigation devices, and engine control units for storing critical data.
4. Industrial Control Systems: Employed in programmable logic controllers (PLCs) and automation equipment for data storage and retrieval.

Detailed and Complete Alternative Models

1. S29GL128N90TFIR10 - 128 Megabit NOR Flash Memory, 90 ns access time, TSOP package.
2. S29GL512N90TFI010 - 512 Megabit NOR Flash Memory, 90 ns access time, TSOP package.
3. S29GL01GN90TFI020 - 1 Gigabit NOR Flash Memory, 90 ns access time, TSOP package.
4. S29GL02GN90TFI030 - 2 Gigabit NOR Flash Memory, 90 ns access time, TSOP package.

These alternative models offer different memory capacities while maintaining similar characteristics and pin configurations to the S29GL256N90TFAR10.

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